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| F-14 01/99 NJ30 Process Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150C - 65C to +175C G S-D S-D G Die Size = 0.016" X 0.016" All Round Bond Pads = 0.0028" All Square Bond Pads = 0.004" Substrate is also Gate. This process available for customer-specified applications. At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss eN 6 4.3 1 4 5 1.5 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 2 -1 Min - 30 Typ - 40 - 10 - 100 22 -5 Max Unit V pA mA V NJ30 Process Test Conditions IG = - 1 A, VDS = OV VGS = - 20V, VDS = OV VDS = 15V, VGS = OV VDS = 15V, ID = 1 nA VDS = 15V, VGS = OV VDS = 15V, VGS = OV VDS = 15V, VGS = OV f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz nV/HZ VDS = 10V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com |
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